AOT190A60L
MOSFET N-CH 600V TO220-3Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. aMOS5™ N-Channel MOSFET, part number AOT190A60L, offers a 600V drain-source voltage and a continuous drain current of 20A at 25°C. This through-hole TO-220-3 packaged device features a maximum power dissipation of 208W. The MOSFET exhibits a typical Rds On of 170mOhm at 7.6A and 10V gate drive voltage. Key parameters include a gate charge of 34 nC at 10V and input capacitance of 1935 pF at 100V. With an operating temperature range of -55°C to 150°C, this component is suitable for applications in power supply units and industrial motor control.
Additional Information
Series: aMOS5™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 7.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 4.6V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1935 pF @ 100 V |
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