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AOT1608L

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AOT1608L

MOSFET N-CH 60V 11A/140A TO220

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOT1608L is an N-Channel MOSFET designed for high-performance applications. This component features a 60V drain-source voltage (Vdss) and offers continuous drain current capabilities of 11A at 25°C ambient (Ta) and 140A at 25°C case (Tc). The device exhibits a low on-resistance of 7.6mOhm maximum at 20A and 10V gate-source voltage. With a gate charge of 84 nC maximum at 10V and input capacitance of 3690 pF maximum at 25V, it is suitable for demanding switching applications. Power dissipation is rated at 2.1W (Ta) and 333W (Tc). The AOT1608L is packaged in a TO-220-3 through-hole configuration, operating across a temperature range of -55°C to 175°C. This MOSFET is utilized in power supply designs, motor control, and automotive systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs7.6mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id3.7V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3690 pF @ 25 V

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