AOT1606L
MOSFET N-CH 60V 12A/178A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOT1606L is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 60V and offers exceptional current handling capabilities with a Continuous Drain Current (Id) of 12A at 25°C (ambient) and 178A at 25°C (case). The low on-resistance, specified at a maximum of 6.3mOhm at 20A and 10V Vgs, minimizes conduction losses. With a maximum Gate Charge (Qg) of 102 nC at 10V, switching performance is optimized. The TO-220-3 package facilitates through-hole mounting and supports high power dissipation, rated at 2.1W (ambient) and 417W (case). Operating across a wide temperature range from -55°C to 175°C (TJ), this MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 178A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 417W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 102 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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