AOT15S60L
MOSFET N-CH 600V 15A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AOT15S60L is an N-Channel MOSFET from the aMOS™ series, designed for high-voltage applications. This component features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 15A at 25°C, with a maximum power dissipation of 208W (Tc). The device is housed in a standard TO-220 package, suitable for through-hole mounting. Key electrical parameters include a maximum on-resistance (Rds On) of 290mOhm at 7.5A and 10V, and a gate charge (Qg) of 15.6 nC at 10V. It operates over a temperature range of -55°C to 150°C (TJ). This MOSFET is utilized in power supply applications, industrial automation, and lighting control systems.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 372 pF @ 100 V |
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