AOT13N50
MOSFET N-CH 500V 13A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOT13N50 is a 500V N-Channel MOSFET designed for high-efficiency power conversion applications. This component features a continuous drain current capability of 13A at 25°C and a maximum power dissipation of 250W at the same temperature. The device exhibits a low Rds On of 510mOhm at 6.5A and 10V gate drive, with a gate charge of 37 nC at 10V. Its input capacitance (Ciss) is rated at a maximum of 1633 pF at 25V. The AOT13N50 is packaged in a standard TO-220-3 through-hole configuration, facilitating ease of assembly in various power supply designs, industrial automation, and automotive electronics. It operates within a temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage of ±30V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 510mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1633 pF @ 25 V |