AOT12N65
MOSFET N-CH 650V 12A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AOT12N65 is an N-Channel Power MOSFET designed for high-voltage applications. This device features a Drain-to-Source Voltage (Vdss) of 650V and a continuous Drain Current (Id) of 12A at 25°C (Tc). The AOT12N65 offers a maximum On-Resistance (Rds On) of 720mOhm at 6A and 10V gate drive. With a maximum power dissipation of 278W (Tc), it is suitable for demanding power conversion systems. Key parameters include a Gate Charge (Qg) of 48 nC at 10V and an Input Capacitance (Ciss) of 2150 pF at 25V. The component is housed in a standard TO-220-3 package for through-hole mounting, operating across a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supplies, lighting, and industrial motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 720mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 278W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 25 V |
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