AOT12N60
MOSFET N-CH 600V 12A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOT12N60 is a 600V N-Channel Power MOSFET in a TO-220 package, designed for high-efficiency power conversion applications. This device features a continuous drain current rating of 12A at 25°C and a maximum power dissipation of 278W. With a low on-resistance of 550mOhm at 6A and 10V, the AOT12N60 minimizes conduction losses. The typical gate charge is 50nC at 10V, facilitating fast switching speeds. Its robust construction and operating temperature range of -55°C to 150°C make it suitable for demanding industrial and consumer electronics, including power supplies, lighting, and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 278W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 25 V |
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