AOT12N50
MOSFET N-CH 500V 12A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOT12N50, an N-Channel MOSFET, offers a Drain-to-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 12A at 25°C (Tc). With a maximum power dissipation of 250W (Tc) and a low Rds(on) of 520mOhm at 6A and 10V, this component is suitable for demanding applications. Key parameters include a Gate Charge (Qg) of 37 nC @ 10V and Input Capacitance (Ciss) of 1633 pF @ 25V. The MOSFET is housed in a TO-220 package with a through-hole mounting type and operates across a temperature range of -55°C to 150°C (TJ). This device finds utility in power supply, motor control, and industrial power conversion applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1633 pF @ 25 V |