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AOT12N30L

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AOT12N30L

MOSFET N CH 300V 11.5A TO220

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOT12N30L is a 300V N-Channel MOSFET packaged in a TO-220-3 through-hole configuration. This device offers a continuous drain current of 11.5A at 25°C (Tc) and a maximum power dissipation of 132W (Tc). Key electrical specifications include a Vgs(th) of 4.5V at 250µA, a maximum gate-source voltage of ±30V, and a drain-to-source breakdown voltage (Vdss) of 300V. The on-resistance (Rds On) is a maximum of 420mOhm at 6A and 10V drive. Input capacitance (Ciss) is specified at 790pF at 25V, with a gate charge (Qg) of 16nC at 10V. This component is suitable for applications in power supply, motor control, and industrial automation. The operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11.5A (Tc)
Rds On (Max) @ Id, Vgs420mOhm @ 6A, 10V
FET Feature-
Power Dissipation (Max)132W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)300 V
Gate Charge (Qg) (Max) @ Vgs16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds790 pF @ 25 V

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