AOT11S65L
MOSFET N-CH 650V 11A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. aMOS™ series AOT11S65L is an N-Channel Power MOSFET designed for high-voltage applications. This component features a 650V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 11A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 399mOhm at 5.5A and 10V Vgs. With a total gate charge (Qg) of 13.2 nC at 10V, it is suitable for applications requiring efficient switching. The AOT11S65L is housed in a standard TO-220-3 package, facilitating through-hole mounting. Its power dissipation capability is rated at 198W (Tc), and it operates within an extended temperature range of -55°C to 150°C. This MOSFET is utilized in power supply units, motor drives, and industrial power applications.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 399mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 198W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 646 pF @ 100 V |
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