AOT11S60L
MOSFET N-CH 600V 11A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. aMOS™ series N-Channel MOSFET with part number AOT11S60L. This through-hole component features a Vdss rating of 600V and a continuous drain current (Id) of 11A at 25°C, with a maximum power dissipation of 178W. The Rds On is specified at 399mOhm maximum at 3.8A and 10V gate drive. Key parameters include Ciss of 545pF at 100V and gate charge (Qg) of 11nC at 10V. The device operates over a temperature range of -55°C to 150°C and is housed in a standard TO-220 package. This MOSFET is suitable for applications in power supply units, industrial motor control, and lighting solutions.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 399mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 178W (Tc) |
| Vgs(th) (Max) @ Id | 4.1V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 545 pF @ 100 V |
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