AOT11N70
MOSFET N-CH 700V 11A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AOT11N70 is a high-voltage N-Channel MOSFET designed for demanding power applications. This component features a drain-source voltage (Vdss) of 700 V and a continuous drain current (Id) of 11 A at 25°C, with a maximum power dissipation of 271 W at the same temperature. The AOT11N70 offers a low on-resistance (Rds On) of 870 mOhm at 5.5 A and 10 V gate drive, with a gate charge (Qg) of 45 nC at 10 V. It is housed in a TO-220 package, suitable for through-hole mounting. Key electrical parameters include an input capacitance (Ciss) of 2150 pF at 25 V and a gate-source breakdown voltage (Vgs(Max)) of ±30 V. The threshold voltage (Vgs(th)) is 4.5 V at 250 µA. This device is utilized in industries such as power supply, lighting, and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 870mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 271W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 25 V |
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