AOT11N60L
MOSFET N-CH 600V 11A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AOT11N60L is a 600V N-Channel power MOSFET in a TO-220 package. This device offers a continuous drain current of 11A at 25°C (Tc) and a maximum power dissipation of 272W (Tc). Key electrical characteristics include a Drain-to-Source Voltage (Vdss) of 600V and a maximum Rds(On) of 650mOhm at 5.5A and 10V gate drive. The gate charge (Qg) is rated at 37 nC maximum at 10V, with input capacitance (Ciss) at 1990 pF maximum at 25V. It features a standard TO-220-3 package suitable for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This component finds application in power conversion systems, including switch-mode power supplies and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 272W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1990 pF @ 25 V |
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