AOT11C60PL
MOSFET N-CH 600V 11A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. N-Channel MOSFET, part number AOT11C60PL, offers a 600V drain-source voltage rating and a continuous drain current of 11A at 25°C. This TO-220 packaged component features a maximum on-resistance of 420mOhm at 5.5A and 10V gate drive. Key parameters include a gate charge of 50nC at 10V and input capacitance of 2333pF at 100V. The device supports a maximum power dissipation of 298W, with a junction temperature range of -55°C to 150°C. Its through-hole mounting and TO-220-3 package are suitable for power supply and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 298W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2333 pF @ 100 V |
Request a Quote
Clients Also Buy
AONV110A60
N
AOK065A60FD
LINEAR IC
AOSP66406
N
