AOT11C60
MOSFET N-CHANNEL 600V 11A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOT11C60 is an N-Channel MOSFET designed for high-voltage applications. This through-hole component, housed in a TO-220-3 package, features a Drain to Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 11A at 25°C. The device exhibits a maximum on-resistance (Rds On) of 440mOhm at 5.5A and 10V gate drive. Key electrical characteristics include a gate charge (Qg) of 42 nC at 10V and input capacitance (Ciss) of 2000 pF at 100V. With a maximum power dissipation of 278W (Tc) and an operating temperature range of -55°C to 150°C, the AOT11C60 is suitable for power conversion circuits across various industries, including industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 440mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 278W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 100 V |
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