AOT1100L
MOSFET N-CH 100V 8A/130A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOT1100L is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 100 V and a continuous drain current rating of 8A at ambient temperature (Ta) and 130A at case temperature (Tc). The Rds On is specified at a maximum of 12mOhm at 20A and 10V gate drive.
With a maximum power dissipation of 2.1W (Ta) and 500W (Tc), and an operating temperature range of -55°C to 175°C, the AOT1100L is suitable for demanding environments. Key parameters include a gate charge (Qg) of 100 nC at 10V and input capacitance (Ciss) of 4833 pF at 25V. The device is housed in a standard TO-220-3 package, facilitating through-hole mounting. This MOSFET is utilized in various industrial sectors including power supplies, motor control, and automotive electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta), 130A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 500W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4833 pF @ 25 V |
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