AOT10T60PL
MOSFET N-CH 600V 10A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. N-Channel MOSFET, part number AOT10T60PL. This device features a 600V drain-source voltage (Vdss) and 10A continuous drain current at 25°C (Tc). The AOT10T60PL offers a maximum on-resistance (Rds On) of 700mOhm at 5A and 10V gate-source voltage. With a power dissipation of 208W (Tc) and a gate charge of 40nC at 10V, this TO-220 packaged component is suitable for high-voltage applications. Typical industries utilizing this MOSFET include industrial power supplies and power factor correction circuits. The device operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1595 pF @ 100 V |
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