AOT10T60P
MOSFET N-CHANNEL 600V 10A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. N-Channel MOSFET, part number AOT10T60P, offers a 600 V drain-source voltage and 10 A continuous drain current at 25°C. This device features a maximum on-resistance of 700 mOhm at 5 A and 10 V Vgs, with a gate charge of 40 nC at 10 V. The input capacitance (Ciss) is a maximum of 1595 pF at 100 V. Designed for through-hole mounting in a TO-220-3 package, the AOT10T60P has a maximum power dissipation of 208 W at 25°C. Its operating temperature range is from -55°C to 150°C. This component is suitable for applications in power supply, industrial, and lighting sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1595 pF @ 100 V |
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