AOT10N60
MOSFET N-CH 600V 10A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AOT10N60 is a 600V N-Channel MOSFET designed for high-voltage applications. This component features a continuous drain current capability of 10A at 25°C and a maximum power dissipation of 250W at 25°C. The Rds On is specified at 750mOhm maximum at 5A and 10V gate drive. Key parameters include a gate charge of 40 nC and input capacitance of 1600 pF. The device is housed in a standard TO-220-3 package, suitable for through-hole mounting. This MOSFET is utilized in power supply units, motor control, and lighting applications. Operating temperature range is from -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
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