AOSP62626E
NManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. presents the AOSP62626E, an N-Channel MOSFET from the AlphaSGT™ series. This component features a Drain to Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 11 A at 25°C (Ta). The Rds On is rated at a maximum of 13.5 mOhm at 11 A and 10 V. Key parameters include a Gate Charge (Qg) of 25 nC at 10 V and an Input Capacitance (Ciss) of 900 pF at 30 V. This device is housed in an 8-SOIC surface mount package and operates across a temperature range of -55°C to 150°C (TJ). The maximum power dissipation is 3.1 W (Ta). This MOSFET is suitable for applications within the automotive and industrial sectors.
Additional Information
Series: AlphaSGT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 30 V |
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