AONV070V65G1
GANManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. AONV070V65G1 is a 650V N-Channel GaNFET designed for high-efficiency power conversion applications. This device offers a continuous drain current of 16A at 25°C and a maximum power dissipation of 125W. Key electrical characteristics include a low on-resistance of 90mOhm at 6A and 6V, an input capacitance (Ciss) of 203pF at 400V, and a gate charge (Qg) of 6.9nC at 6V. The AONV070V65G1 is housed in an 8-DFN (8x8) surface mount package, facilitating integration into compact designs. This component is suitable for use in sectors such as server power, industrial power supplies, and electric vehicle charging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 6A, 6V |
| FET Feature | - |
| Power Dissipation (Max) | 125W |
| Vgs(th) (Max) @ Id | 2.3V @ 5mA |
| Supplier Device Package | 8-DFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Vgs (Max) | 6V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.9 nC @ 6 V |
| Input Capacitance (Ciss) (Max) @ Vds | 203 pF @ 400 V |