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AONR36326C

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AONR36326C

MOSFET N-CH 30V 12A/12A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, part number AONR36326C, offers a 30V drain-source voltage (Vdss) and continuous drain current capability of 12A (Ta) and 12A (Tc). This device features a maximum Rds(on) of 9.8mOhm at 12A and 10V, with a gate threshold voltage (Vgs(th)) of 2.3V at 250µA. Key parameters include a maximum gate charge (Qg) of 15 nC at 10V and input capacitance (Ciss) of 540 pF at 15V. The AONR36326C operates over a temperature range of -55°C to 150°C (TJ). It is housed in a compact 8-DFN-EP (3x3) surface mount package, supplied on tape and reel. This component is suitable for applications in power management and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs9.8mOhm @ 12A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 20.5W (Tc)
Vgs(th) (Max) @ Id2.3V @ 250µA
Supplier Device Package8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds540 pF @ 15 V

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