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AON7784

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AON7784

MOSFET N-CH 30V 31A/50A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. SRFET™ series N-Channel MOSFET, part number AON7784, is designed for demanding applications. This device features a 30V drain-source voltage and a continuous drain current capability of 31A at ambient temperature and 50A at case temperature. With a low on-resistance of 3.5mOhm maximum at 20A and 10V Vgs, it offers efficient power handling, with a maximum power dissipation of 6.2W at ambient and 83W at case temperature. The AON7784 utilizes an 8-DFN-EP (3.3x3.3) package for surface mounting and incorporates a body Schottky diode. Key electrical parameters include a gate charge of 34 nC at 10V and input capacitance of 4600 pF at 15V. It operates across a temperature range of -55°C to 150°C. This component is commonly found in power supply, automotive, and industrial applications.

Additional Information

Series: SRFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C31A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs3.5mOhm @ 20A, 10V
FET FeatureSchottky Diode (Body)
Power Dissipation (Max)6.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id2.1V @ 250µA
Supplier Device Package8-DFN-EP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4600 pF @ 15 V

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