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AON7760

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AON7760

MOSFET N-CH 25V 33A/75A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AlphaMOS AON7760 is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 25V and offers continuous drain current capabilities of 33A at ambient temperature and 75A at case temperature. The AON7760 exhibits a low on-resistance (Rds On) of 2mOhm at 20A and 10V Vgs. Key parameters include a gate charge (Qg) of 76 nC at 10V and input capacitance (Ciss) of 5520 pF at 12.5V. With a maximum power dissipation of 4.1W (Ta) and 34.5W (Tc), this device is suitable for operation across a wide temperature range of -55°C to 150°C. The AON7760 is housed in an 8-PowerWDFN package, specifically an 8-DFN-EP (3.3x3.3), and is supplied on tape and reel. This MOSFET is commonly utilized in power management solutions, automotive electronics, and high-efficiency power conversion systems.

Additional Information

Series: AlphaMOSRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C33A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs2mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)4.1W (Ta), 34.5W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package8-DFN-EP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5520 pF @ 12.5 V

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