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AON7754

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AON7754

MOSFET N-CH 30V 24A/32A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AlphaMOS AON7754 is an N-Channel Power MOSFET designed for high-efficiency power conversion. This component offers a 30V drain-source breakdown voltage and supports continuous drain currents of 24A at ambient temperature (Ta) and 32A at case temperature (Tc). Its low on-resistance, specified at 3.6mOhm maximum at 20A and 10V Vgs, minimizes conduction losses. The device features a Schottky diode integrated within the body for enhanced performance. Key electrical parameters include a maximum gate charge (Qg) of 40nC at 10V Vgs and a maximum input capacitance (Ciss) of 1975pF at 15V Vds. The AON7754 operates across a wide temperature range of -55°C to 150°C (TJ) and supports gate drive voltages from 4.5V to 10V. Power dissipation is rated at 3.1W (Ta) and 70W (Tc). Packaged in an 8-DFN-EP (3x3) surface-mount configuration, this MOSFET is suitable for applications in computing, consumer electronics, and industrial power systems. Supplied on tape and reel.

Additional Information

Series: AlphaMOSRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C24A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs3.6mOhm @ 20A, 10V
FET FeatureSchottky Diode (Body)
Power Dissipation (Max)3.1W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device Package8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1975 pF @ 15 V

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