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AON7752

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AON7752

MOSFET N-CH 30V 15A/16A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. presents the AON7752, an N-Channel Power MOSFET designed for efficient power management. This component features a 30V drain-source voltage (Vdss) and offers a continuous drain current capability of 15A (at ambient temperature) and 16A (at case temperature). The AON7752 exhibits a maximum on-resistance (Rds On) of 8.2mOhm at 16A and 10V gate-source voltage. Its low thermal resistance and high power dissipation (3.1W at ambient, 20W at case) make it suitable for demanding applications. The device is housed in a compact 8-DFN-EP (3x3) package, facilitating surface mounting. Key electrical characteristics include a maximum gate charge (Qg) of 15 nC at 10V and an input capacitance (Ciss) of 605 pF at 15V. This MOSFET is utilized in industries such as consumer electronics, computing, and automotive.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs8.2mOhm @ 16A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds605 pF @ 15 V

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