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AON7702B

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AON7702B

MOSFET N-CH 30V 13.5A/20A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. SRFET™ N-Channel MOSFET, part number AON7702B. This 30V device features a low on-resistance of 9.5mOhm maximum at 13.5A and 10V Vgs. It supports continuous drain currents of 13.5A at ambient temperature and 20A at case temperature, with maximum power dissipation of 3.1W (Ta) and 23W (Tc). Key parameters include a gate charge (Qg) of 24 nC at 10V and input capacitance (Ciss) of 810 pF at 15V Vds. The device incorporates a Schottky diode in its body and is supplied in an 8-DFN-EP (3x3) package, suitable for surface mounting. Operating temperature range is -55°C to 150°C. This component is utilized in applications such as power management and high-efficiency power conversion.

Additional Information

Series: SRFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C13.5A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs9.5mOhm @ 13.5A, 10V
FET FeatureSchottky Diode (Body)
Power Dissipation (Max)3.1W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds810 pF @ 15 V

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