AON7702
MOSFET N-CH 30V 13.5A/36A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AON7702 is an N-Channel MOSFET from the SRFET™ series. This device features a 30V drain-source voltage rating and a continuous drain current capability of 13.5A under typical ambient conditions and 36A when managed by case temperature. The low on-resistance is specified at 10mOhm maximum at 13.5A and 10V Vgs. Key parameters include a maximum gate charge of 48 nC at 10V Vgs and an input capacitance of 4250 pF maximum at 15V Vds. The AON7702 integrates a Schottky diode within its body for enhanced performance. Designed for surface mounting, it is supplied in an 8-DFN-EP (3x3) package, presented on tape and reel. This component is utilized in applications requiring efficient power switching, such as power management and high-efficiency converters across various industrial and consumer electronics sectors. The maximum power dissipation is 3.1W (Ta) and 23W (Tc).
Additional Information
Series: SRFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.5A (Ta), 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 13.5A, 10V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 3.1W (Ta), 23W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-DFN-EP (3x3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4250 pF @ 15 V |
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