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AON7532E

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AON7532E

MOSFET N-CH 30V 30.5A/28A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AlphaMOS AON7532E is an N-Channel MOSFET with a drain-source breakdown voltage of 30 V. This device features a low on-resistance of 3.5 mOhm at 20A and 10V Vgs, facilitating efficient power transfer. It offers a continuous drain current of 28A (Tc) and can dissipate up to 28W (Tc) or 5W (Ta). The AON7532E is housed in a compact 8-DFN (3x3) surface-mount package, suitable for demanding applications in areas such as automotive systems and industrial power management. Key parameters include a gate charge of 40 nC at 10V and input capacitance of 1950 pF at 15V. It operates across a wide temperature range of -55°C to 150°C (TJ) and is supplied in tape and reel packaging.

Additional Information

Series: AlphaMOSRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Rds On (Max) @ Id, Vgs3.5mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package8-DFN (3x3)
Grade-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1950 pF @ 15 V
Qualification-

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