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AON7530

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AON7530

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Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

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Alpha & Omega Semiconductor Inc. AON7530 is an N-Channel MOSFET designed for high-efficiency power conversion applications. This component features a 30 V drain-source breakdown voltage and supports continuous drain currents of up to 24 A at ambient temperature and 30 A at case temperature. The AON7530 exhibits a low on-resistance of 4.7 mOhm maximum at 20 A and 10 V gate-source voltage. With a maximum power dissipation of 24 W, it is suitable for demanding thermal environments. The device is housed in an 8-DFN-EP (3x3) surface-mount package, facilitating compact board designs. Key electrical parameters include an input capacitance (Ciss) of 1320 pF maximum at 15 V drain-source voltage and a gate charge (Qg) of 18.8 nC maximum at 10 V gate-source voltage. This MOSFET is commonly employed in automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C24A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs4.7mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)24W
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs18.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1320 pF @ 15 V

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