AON7530
NManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. AON7530 is an N-Channel MOSFET designed for high-efficiency power conversion applications. This component features a 30 V drain-source breakdown voltage and supports continuous drain currents of up to 24 A at ambient temperature and 30 A at case temperature. The AON7530 exhibits a low on-resistance of 4.7 mOhm maximum at 20 A and 10 V gate-source voltage. With a maximum power dissipation of 24 W, it is suitable for demanding thermal environments. The device is housed in an 8-DFN-EP (3x3) surface-mount package, facilitating compact board designs. Key electrical parameters include an input capacitance (Ciss) of 1320 pF maximum at 15 V drain-source voltage and a gate charge (Qg) of 18.8 nC maximum at 10 V gate-source voltage. This MOSFET is commonly employed in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta), 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 24W |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-DFN-EP (3x3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1320 pF @ 15 V |
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