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AON7518

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AON7518

MOSFET N-CH 30V 24A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AlphaMOS series AON7518 is an N-Channel MOSFET designed for efficient power conversion. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 24A at 25°C (Tc). The AON7518 exhibits a low on-resistance (Rds On) of 8.8mOhm maximum at 20A and 10V Vgs. Key parameters include a gate charge (Qg) of 22 nC maximum at 10V Vgs and input capacitance (Ciss) of 1086 pF maximum at 15V Vds. With a maximum power dissipation of 23W (Tc), it is suitable for demanding applications. The component is housed in an 8-DFN-EP (3x3) package, designed for surface mounting, and supplied on tape and reel. This MOSFET is utilized in various power management applications within the automotive and industrial sectors.

Additional Information

Series: AlphaMOSRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Rds On (Max) @ Id, Vgs8.8mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1086 pF @ 15 V

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