AON7516
MOSFET N-CH 30V 20A/30A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, part number AON7516, is engineered for high-efficiency switching applications. This device features a 30V drain-source voltage (Vdss) and supports continuous drain currents of 20A at ambient temperature and 30A at case temperature. The low on-resistance (Rds On) of 4.5mOhm at 20A and 10V gate drive ensures minimal conduction losses. Key parameters include a maximum gate charge (Qg) of 33 nC at 10V and a maximum input capacitance (Ciss) of 1229 pF at 15V. Designed for surface mounting in an 8-DFN-EP (3x3) package, the AON7516 offers a maximum power dissipation of 3.1W (Ta) and 25W (Tc). This component is suitable for use in power management, automotive, and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-DFN-EP (3x3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1229 pF @ 15 V |
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