AON7514
MOSFET N-CH 30V 20A/30A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. AON7514, an N-Channel Power MOSFET, offers a 30V drain-source breakdown voltage and a continuous drain current capability of 20A at ambient and 30A at case temperature. This component features a low on-resistance of 5mOhm maximum at 20A and 10V gate-source voltage. The 8-DFN-EP (3x3) package is suitable for surface mounting applications. Key electrical characteristics include a maximum gate charge of 22.5 nC at 10V and an input capacitance of 951 pF maximum at 15V. Power dissipation is rated at 3W ambient and 23W at case temperature. This device operates across a temperature range of -55°C to 150°C. The AON7514 is utilized in applications requiring efficient power switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 23W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-DFN-EP (3x3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 22.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 951 pF @ 15 V |
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