AON7506
MOSFET N-CH 30V 12A/12A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. MOSFET N-CH 30V 12A/12A 8DFN, part number AON7506, is a high-performance N-Channel Power MOSFET. It features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 12A at 25°C (ambient and case). With a low on-resistance (Rds On) of 9.8mOhm at 12A and 10V gate-source voltage, it offers efficient power delivery. The device supports a gate drive voltage range from 4.5V to 10V. Key parameters include a maximum gate charge (Qg) of 12.2 nC at 10V and an input capacitance (Ciss) of 542 pF at 15V. The AON7506 is housed in a compact 8-DFN-EP (3x3) package for surface mounting, with a maximum power dissipation of 3.1W (ambient) and 20.5W (case). Its operating temperature range is -55°C to 150°C. This component is utilized in various applications including power management and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.8mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 20.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | 8-DFN-EP (3x3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 542 pF @ 15 V |
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