AON7502
MOSFET N-CH 30V 21A/30A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. presents the AON7502, an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 30V and offers a continuous drain current (Id) of 21A at ambient temperature (Ta) and 30A at case temperature (Tc). The device achieves a low on-resistance (Rds On) of 4.7mOhm at 20A and 10V gate drive. With a maximum power dissipation of 3.1W (Ta) and 31W (Tc), this surface mount MOSFET is housed in an 8-DFN-EP (3x3) package. Key parameters include a gate charge (Qg) of 22nC (max) at 10V and input capacitance (Ciss) of 1022pF (max) at 15V. The AON7502 is suitable for use in power management, automotive, and industrial automation sectors. Operating temperature range is -55°C to 150°C (TJ). This component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 31W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-DFN-EP (3x3) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1022 pF @ 15 V |
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