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AON7474A

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AON7474A

MOSFET N-CH 75V 4A/7.5A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AON7474A is an N-Channel Power MOSFET designed for efficient power management. This device features a 75V drain-source breakdown voltage and offers continuous drain current capabilities of 4A at ambient temperature (Ta) and 7.5A at case temperature (Tc). The AON7474A exhibits a maximum Rds(On) of 130mOhm at 5A and 10V Vgs, with a gate drive range of 4.5V to 10V. Key electrical parameters include a maximum gate charge (Qg) of 15 nC and input capacitance (Ciss) of 280 pF at 37.5V Vds. The component is housed in an 8-DFN-EP (3x3) package for surface mounting, supporting a maximum power dissipation of 4.1W (Ta) and 15.5W (Tc). Operating temperature range is -50°C to 150°C (TJ). This MOSFET is suitable for applications in power conversion, battery management, and general-purpose switching.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-50°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4A (Ta), 7.5A (Tc)
Rds On (Max) @ Id, Vgs130mOhm @ 5A, 10V
FET Feature-
Power Dissipation (Max)4.1W (Ta), 15.5W (Tc)
Vgs(th) (Max) @ Id1.6V @ 250µA
Supplier Device Package8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds280 pF @ 37.5 V

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