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AON7462

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AON7462

MOSFET N-CH 300V 900MA/2.5A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. presents the AON7462, an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 300V, with a continuous drain current (Id) of 900mA at ambient temperature (Ta) and 2.5A at case temperature (Tc). Maximum power dissipation is rated at 3.1W (Ta) and 25W (Tc). The device offers a low on-resistance (Rds On) of 1.5 Ohm maximum at 900mA and 10V gate drive. Key electrical parameters include a Gate Charge (Qg) of 5.6 nC maximum and Input Capacitance (Ciss) of 240 pF maximum at 25V. The AON7462 is housed in an 8-DFN-EP (3x3) surface mount package, supplied on tape and reel. This MOSFET is suitable for use in power supplies and high-voltage switching applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-50°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C900mA (Ta), 2.5A (Tc)
Rds On (Max) @ Id, Vgs1.5Ohm @ 900mA, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device Package8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)300 V
Gate Charge (Qg) (Max) @ Vgs5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds240 pF @ 25 V

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