AON7442
MOSFET N-CHANNEL 30V 50A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AlphaMOS AON7442 is a 30V N-Channel MOSFET designed for efficient power switching. This device features a low Rds(on) of 1.9mOhm at 20A and 10V Vgs, enabling minimal conduction losses. With a continuous drain current capability of 50A (Tc) and a power dissipation of 83W (Tc), it is suitable for demanding applications. The AON7442 utilizes a 3.3x3.3mm 8-DFN-EP package for optimal thermal performance and board space utilization. Key parameters include a gate charge of 65 nC @ 10V and an input capacitance of 2994 pF @ 15V. Operating across a temperature range of -55°C to 150°C (TJ), this component finds application in power management, automotive, and industrial sectors.
Additional Information
Series: AlphaMOSRoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-DFN-EP (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2994 pF @ 15 V |
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