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AON7432

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AON7432

MOSFET N-CH 30V 10.5A/18A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. presents the AON7432, an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and offers a continuous drain current of 10.5A at ambient temperature (Ta) and 18A at case temperature (Tc). Its low on-resistance is specified at a maximum of 15mOhm at 10.5A and 10V Vgs. The AON7432 supports a gate drive voltage range from 2.5V to 10V, with a maximum gate-source voltage of ±12V. Key electrical characteristics include a maximum input capacitance (Ciss) of 813pF at 15V Vds and a gate charge (Qg) of 26nC at 10V Vgs. The device is housed in an 8-DFN-EP (3x3) package, suitable for surface mounting. Power dissipation is rated at 3.1W (Ta) and 20.8W (Tc). Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is utilized in power management solutions across various industries, including consumer electronics and industrial automation. The AON7432 is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10.5A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs15mOhm @ 10.5A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device Package8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds813 pF @ 15 V

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