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AON7409

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AON7409

MOSFET P-CH 30V 16A/32A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AON7409 is a P-Channel MOSFET designed for efficient power switching applications. This component features a 30V drain-source voltage (Vdss) and offers a continuous drain current of 16A at ambient temperature (Ta) and 32A at case temperature (Tc). The device exhibits a maximum on-resistance (Rds On) of 8.5mOhm at 16A and 10V gate-source voltage (Vgs). With a maximum power dissipation of 3.1W (Ta) and 96W (Tc), it is suitable for demanding thermal environments. Key electrical characteristics include a gate charge (Qg) of 58nC (max) at 10V Vgs and input capacitance (Ciss) of 2142pF (max) at 15V Vds. The AON7409 is housed in an 8-DFN-EP (3x3) package with surface mount capability and operates within a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C16A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs8.5mOhm @ 16A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id2.7V @ 250µA
Supplier Device Package8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2142 pF @ 15 V

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