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AON7408L

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AON7408L

MOSFET N-CH 30V 7.5A/20A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, part number AON7408L. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 7.5A at typical ambient conditions and 20A at typical case conditions. The low on-resistance is specified at 22mOhm maximum at 9A and 10V Vgs. Key parameters include a gate charge of 8nC at 4.5V and input capacitance of 820pF at 15V. The device is housed in an 8-DFN-EP (3x3) package, suitable for surface mounting. Maximum power dissipation is 1.7W (Ta) or 20W (Tc). This MOSFET is engineered for applications across automotive and industrial sectors requiring efficient power switching. The operating temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7.5A (Ta), 20A (Ta)
Rds On (Max) @ Id, Vgs22mOhm @ 9A, 10V
FET Feature-
Power Dissipation (Max)1.7W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds820 pF @ 15 V

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