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AON7408

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AON7408

MOSFET N-CH 30V 10A/18A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. presents the AON7408, an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source voltage (Vdss) and supports a continuous drain current of 10A at ambient temperature and 18A at case temperature. With a low on-resistance (Rds On) of 20mOhm maximum at 10A and 10V Vgs, it minimizes conduction losses. The AON7408 is housed in an 8-DFN-EP (3x3) package, suitable for surface mounting. Key electrical characteristics include a maximum gate charge (Qg) of 8.6 nC at 4.5V Vgs and an input capacitance (Ciss) of 448 pF maximum at 15V Vds. Power dissipation is rated at 3.1W (Ta) and 11W (Tc). Operating temperature ranges from -55°C to 150°C (TJ). This component is utilized in power management, automotive, and industrial applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs20mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 11W (Tc)
Vgs(th) (Max) @ Id2.6V @ 250µA
Supplier Device Package8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds448 pF @ 15 V

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