AON7402
MOSFET N-CH 30V 13.5A/39A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AON7402 is a 30V N-Channel MOSFET designed for high-efficiency power management applications. This device features a low Rds(on) of 10mOhm at 20A and 10V Vgs, enabling minimal conduction losses. The continuous drain current is specified at 13.5A under typical ambient conditions (Ta) and up to 39A under pulsed conditions or at the case temperature (Tc). Power dissipation is rated at 3.1W (Ta) and 26W (Tc). The MOSFET is housed in an 8-DFN-EP (3x3) package, suitable for surface mounting. Key electrical parameters include a gate charge (Qg) of 17.8 nC at 10V and input capacitance (Ciss) of 770 pF at 15V. This component is commonly utilized in power supplies, battery management systems, and automotive electronics. Operating temperature range is -55°C to 150°C (TJ). The device is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.5A (Ta), 39A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 26W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-DFN-EP (3x3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 15 V |
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