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AON7401L

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AON7401L

MOSFET P-CH 30V 9A/20A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AON7401L is a P-Channel Power MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 30V and supports continuous drain currents of 9A at ambient temperature (Ta) and 20A at case temperature (Tc). With a low on-resistance of 14mOhm at 9A and 20V, the AON7401L minimizes conduction losses. The device is housed in an 8-DFN-EP (3x3) package, suitable for surface mounting and demanding thermal management. Key electrical parameters include a Gate Charge (Qg) of 39 nC at 10V and Input Capacitance (Ciss) of 2600 pF at 15V. The maximum power dissipation is 1.6W (Ta) and 27W (Tc). This MOSFET is utilized in power management, automotive, and industrial sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C9A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs14mOhm @ 9A, 20V
FET Feature-
Power Dissipation (Max)1.6W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2600 pF @ 15 V

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