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AON7401

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AON7401

MOSFET P-CH 30V 12A/35A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. P-Channel MOSFET, part number AON7401, features a 30V drain-source voltage. This surface mount device, presented in an 8-DFN-EP (3x3) package, offers a continuous drain current of 12A at ambient temperature (Ta) and 35A at case temperature (Tc). Maximum power dissipation is rated at 3.1W (Ta) and 29W (Tc). The device exhibits a low on-resistance of 14mOhm at 9A and 10V gate-source voltage. Key parameters include a gate charge of 39 nC (max) at 10V and input capacitance of 2600 pF (max) at 15V. The AON7401 is suitable for applications requiring efficient power switching, commonly found in power management, consumer electronics, and industrial automation. It operates across a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs14mOhm @ 9A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2600 pF @ 15 V

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