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AON7400B

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AON7400B

MOSFET N-CH 30V 18A/40A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AON7400B is an N-Channel MOSFET with a 30V drain-source breakdown voltage. This device features a low on-resistance of 7.5mOhm at 18A and 10V Vgs, enabled by its trench MOSFET technology. The continuous drain current is rated at 18A at ambient temperature and 40A at case temperature, with a maximum power dissipation of 4.1W (Ta) and 24W (Tc). Key parameters include a gate charge of 26 nC (max) at 10V Vgs and an input capacitance of 1440 pF (max) at 15V Vds. The AON7400B is housed in an 8-DFN-EP (3x3) package, suitable for surface mounting. It operates across a temperature range of -55°C to 150°C. This component is commonly utilized in power management applications within the automotive and industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs7.5mOhm @ 18A, 10V
FET Feature-
Power Dissipation (Max)4.1W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1440 pF @ 15 V

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