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AON7202L

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AON7202L

MOSFET N-CH 30V 20A/40A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AON7202L is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 30V and supports continuous drain current (Id) of 20A at ambient temperature and 40A at case temperature. With a low on-resistance (Rds On) of 5mOhm at 20A and 10V, it minimizes conduction losses. The device is housed in an 8-DFN-EP (3x3) package, facilitating efficient thermal management with a maximum power dissipation of 3.1W (Ta) and 36W (Tc). Key parameters include a gate charge (Qg) of 33 nC at 10V and input capacitance (Ciss) of 2200 pF at 15V. The AON7202L is suitable for use in automotive, industrial, and consumer electronics where robust power control is essential. Operating temperature ranges from -55°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs5mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id2.3V @ 250µA
Supplier Device Package8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2200 pF @ 15 V

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