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AON7200

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AON7200

MOSFET N-CH 30V 15.8A/40A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, part number AON7200, is a 30V device in an 8-DFN-EP (3x3) package. This surface mount component offers a continuous drain current of 15.8A at ambient temperature (Ta) and 40A at case temperature (Tc). Its low on-resistance is specified at 8mOhm maximum at 20A drain current and 10V gate-source voltage. Key parameters include a Vgs(th) of 2.4V maximum, a Qg of 20 nC maximum, and an input capacitance (Ciss) of 1300 pF maximum. The device supports drive voltages from 4.5V to 10V and operates within a temperature range of -55°C to 150°C. Power dissipation capabilities are 3.1W at Ta and 62W at Tc. This MOSFET is commonly utilized in power management applications across various industries. It is supplied on tape and reel.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15.8A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs8mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device Package8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 15 V

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