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AON6792

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AON6792

MOSFET N-CH 30V 44A/85A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. SRFET™ AON6792 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 30V drain-source breakdown voltage and supports continuous drain currents of 44A at ambient temperature and 85A at case temperature. With a low on-resistance of 2mOhm maximum at 20A and 10V gate drive, it minimizes conduction losses. The AON6792 offers robust thermal performance with a maximum power dissipation of 6.2W (Ta) and 48W (Tc), packaged in an 8-DFN (5x6) surface-mount configuration suitable for demanding thermal management. Key electrical parameters include a gate charge of 49 nC (max) at 10V and input capacitance of 3110 pF (max) at 15V. This component is utilized in industries such as consumer electronics, industrial power supplies, and automotive systems.

Additional Information

Series: SRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C44A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs2mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)6.2W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id1.9V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3110 pF @ 15 V

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