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AON6764

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AON6764

MOSFET N-CHANNEL 30V 85A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. manufactures the AON6764, an N-Channel Power MOSFET. This component features a 30V drain-to-source voltage and a continuous drain current capability of 85A at 25°C. Optimized for high-efficiency switching, it offers a maximum on-resistance of 2.8mOhm at 20A and 10V gate-to-source voltage. The AON6764 is housed in an 8-DFN (5x6) package, suitable for surface mounting and designed for demanding thermal performance with a power dissipation of 42W. Key electrical characteristics include a gate charge of 37nC and input capacitance of 2120pF. The device also integrates a Schottky diode. This MOSFET is utilized in power management applications across various industries, including automotive and industrial power systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C85A (Tc)
Rds On (Max) @ Id, Vgs2.8mOhm @ 20A, 10V
FET FeatureSchottky Diode (Body)
Power Dissipation (Max)42W (Tc)
Vgs(th) (Max) @ Id1.9V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs37 nC @ 1 V
Input Capacitance (Ciss) (Max) @ Vds2120 pF @ 15 V

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